posted on 2016-02-22, 13:51authored byChang-Yu Meng, Hong Chen, Peng Wang, Ling Chen
Novel double-tunnel compounds AxRE2Cu6–xTe6 (A = K–Cs; RE = La–Nd) have been synthesized from the elemental mixtures in the ACl flux at 1123 K and crystallized in the hexagonal P63/m, with a = 9.955(3)–10.0841(6) Å, c = 4.1487(6)–4.2366(6) Å, and Z = 1. A nice reconstruction of the CuTe4-based anionic network has been driven by a cationic substitution of 3 Ba2+ with a combination of x A+ and 2 RE3+ on going from Ba3Cu6Te6 to the title compounds. The undoped sintered polycrystalline La-, Ce-, and Pr-sample (containing 2–4% CsCl impurity) have realized the figure of merit (ZT) of 0.26 at 614 K, 0.17 and 0.23 at 660 K. Typical behaviors of a narrow gap semiconductor or a semi metal are revealed by the electrical conductivity, Seebeck coefficient measurements and the VASP calculations. The presence of the multiple minima in the conduction band and the monotonic increase of ZT with temperature indicate that further enhancement of TE property is possible.