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Nickel Sulfide Thin Films from Thio- and Dithiobiuret Precursors

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posted on 2010-12-14, 00:00 authored by Karthik Ramasamy, Mohammad A. Malik, Paul O’Brien, James Raftery, Madeleine Helliwell
The nickel(II) complexes of several 1,1,5,5-tetraalkyl-2-thiobiurets (R = methyl (<b>1</b>); methyl, ethyl (<b>2</b>); ethyl (<b>3</b>); isopropyl (<b>4</b>)) and 1,1,5,5-tetraalkyl-2,4-dithiobiurets (R = methyl (<b>5</b>); methyl, ethyl (<b>6</b>); ethyl (<b>7</b>)) have been synthesized. The single crystal X-ray structures of complexes (<b>1</b>), (<b>3</b>), (<b>4</b>), (<b>6</b>), and (<b>7</b>) have been determined. Thermogravimetric analysis shows all seven complexes decompose in a single step to one or another form of nickel sulfide. The complexes were used as single-source precursors for the deposition of nickel sulfide thin films by aerosol assisted chemical vapor deposition (AACVD) at temperatures between 320 and 480 °C. Complex (<b>1</b>) gave orthorhombic Ni<sub>7</sub>S<sub>6</sub> at all temperatures with spherical tipped wirelike crystallites and plates. Complex (<b>2</b>) gave mixtures of hexagonal Ni<sub>17</sub>S<sub>18</sub> and orthorhombic Ni<sub>7</sub>S<sub>6</sub> with wires and plates. Complex (<b>3</b>) also led to a mixture of hexagonal Ni<sub>17</sub>S<sub>18</sub> and orthorhombic Ni<sub>7</sub>S<sub>6</sub> phases but with platelike crystallites. In contrast complex (<b>4</b>) gave orthorhombic Ni<sub>9</sub>S<sub>8</sub> with flowerlike structures at 320 and 360 °C and branched structures at 400 °C. Complex (<b>6</b>) gave hexagonal NiS<sub>1.03</sub> at 360 and 400 °C, and orthorhombic Ni<sub>7</sub>S<sub>6</sub> at 440 and 480 °C with wires and rods composed of spherical particles. Complex (<b>7</b>) gave rods composed of hexagonal plates with hexagonal NiS<sub>1.03</sub> phase at 360 and 400 °C and orthorhombic Ni<sub>7</sub>S<sub>6</sub> at 440 and 480 °C. The composition of films deposited from all these complexes was confirmed by EDX analysis. The influence of the precursors on the nature of the deposited films is discussed.

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