posted on 2020-01-30, 15:17authored byMohd Ishtiyak, Gopabandhu Panigrahi, Subhendu Jana, Jai Prakash, Adel Mesbah, Christos D. Malliakas, Sébastien Lebègue, James A. Ibers
A new ternary telluride,
Ba3ScTe5, with a
pseudo-one-dimensional structure, was synthesized at 1173 K by standard
solid-state methods. A single-crystal X-ray diffraction study at 100(2)
K shows the structure to be modulated. The structure of the subcell
of Ba3ScTe5 crystallizes with two formula units
in the hexagonal space group D6h3–P63/mcm with unit cell dimensions
of a = b = 10.1190(5) Å and c = 6.8336(3) Å. The asymmetric unit of the subcell
structure consists of four crystallographically independent sites:
Ba1 (site symmetry: m2m), Sc1 (−3.m), Te1 (m2m), and Te2
(3.2). Its structure is made up of chains of ∞1[ScTe33–] that are separated by Ba2+ cations. The Sc atoms are
bonded to six Te1 atoms that form a slightly distorted octahedral
geometry. The structure of the subcell also contains linear infinite
chains of Te2 with intermediate Te···Te interactions.
The superstructure of Ba3ScTe5 is incommensurate
and was solved in the hexagonal superspace group P–6(00γ)0 with a = 10.1188(3) Å
and c = 6.8332(3) Å and a modulation vector
of q = 0.3718(2)c*. The arrangement
and coordination geometries of the atoms in the superstructure are
very similar to those in the substructure. However, the main difference
is that the infinite chains of Te atoms in the superstructure are
distorted owing to the formation of long- and short-bonded pairs of
Te atoms. The presence of these chains with intermediate Te···Te
interactions makes assignment of the formal oxidation states arbitrary.
The optical absorption study of a polycrystalline sample of Ba3ScTe5 that was synthesized by the stoichiometric
reaction of elements at 1173 K reveals a direct band gap of 1.1(2)
eV. The temperature-dependent resistivity study of polycrystalline
Ba3ScTe5 shows semiconducting behavior corroborating
the optical studies, while density functional theory calculations
report a pseudo band gap of 1.3 eV.