American Chemical Society
ol070584a_si_002.cif (18.87 kB)

Electronegative Oligothiophenes for n-Type Semiconductors:  Difluoromethylene-Bridged Bithiophene and Its Oligomers

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posted on 2007-05-24, 00:00 authored by Yutaka Ie, Masashi Nitani, Motomi Ishikawa, Ken-ichi Nakayama, Hirokazu Tada, Takahiro Kaneda, Yoshio Aso
The synthesis of difluoromethylene-bridged bithiophene and its oligothiophenes are reported. The spectroscopic and electrochemical measurement as well as X-ray analyses unambiguously revealed that the difluoromethylene bridge largely contributes to keeping planarity between the thiophene rings and lowering the LUMO level. The perfluorohexyl-substituted quaterthiophene derivatives showed n-type semiconducting behavior with field-effect electron mobilities up to 0.018 cm2 V-1 s-1.