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Effect of Ancillary Ligands (A) on Oxidative Addition of CH4 to Rhenium(III) Complexes: A = B, Al, CH, SiH, N, and P Using MP2, CCSD(T), and MCSCF Methods

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posted on 26.06.2017, 00:00 by Riffat Parveen, Thomas R. Cundari
A computational study of oxidative addition (OA) of methane to Re­(OC2H4)3A (A = ancillary ligand, which thus may interact with the metal) was carried out. The choice of ancillary ligands has been made based on their electronic properties: A = B or Al (Lewis acid), CH or SiH (electron precise), N (σ-donor), and P (σ-donor/π-acid). The main objective of this study was to understand how variation in A affects the structural and electronic properties of the reactant d4-Re­(III) complex, which can ultimately tune the kinetics and thermodynamics of OA. Results obtained from MP2 calculations revealed that, for OA of CH4 to Re­(OC2H4)3A, the order of ΔG for a choice of ancillary ligand is B > Al > SiH > CH > N > P. Single point calculations for ΔG obtained with CCSD­(T) showed excellent agreement with those computed with MP2 methods. MCSCF calculations indicated that oxidative addition transition states are well described by a single electronic configuration, giving further confidence in the MP2 approach used for geometry optimization and ΔG determination, and that the transition states are more electronically similar to the d4-Re­(III) reactant than the d2-Re­(V) product.