nn7b01374_si_001.pdf (3.05 MB)
Ultrasensitive Vertical Piezotronic Transistor Based on ZnO Twin Nanoplatelet
journal contribution
posted on 2017-04-14, 00:00 authored by Longfei Wang, Shuhai Liu, Xiaolong Feng, Qi Xu, Suo Bai, Laipan Zhu, Libo Chen, Yong Qin, Zhong Lin WangHigh
sensitivity of pressure/strain sensors is the key to accurately
evaluating external mechanical stimuli and could become more important
in future generations of human–machine interfaces and artificial
skin. Here we report the study of a two-terminal piezotronic transistor
based on ZnO twin nanoplatelets (TNPT). Owing to the mirror symmetrical
structure of ZnO twin nanplatelet, compressive pressure-induced positive
piezoelectric polarization charges created at both metal–semiconductor
interfaces can simultaneously lower both Schottky barrier heights
and thus significantly modulate the carrier transport. Our device
exhibits the highest pressure sensitivity of 1448.08–1677.53
meV/MPa, which is more than ∼20 times larger than the highest
value reported previously, and a fast response time of <5 ms. In
addition, it can be used as a photodector with an ultrahigh external
photoresponsivity of ∼1.45 × 104 AW–1, which is ∼105 times larger in magnitude than
that of commercial UV photodetectors. The coupling between the mirror
symmetrical structure and strong piezotronic effect in ZnO twin nanoplatelets
may enable the development of ultrasensitive pressure/strain sensors
for various applications such as artificial skin, health monitoring,
and adaptive biomedical probes.
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pressure sensitivityUltrasensitive Vertical Piezotronic TransistorSchottky barrier heightsTNPTtwo-terminal piezotronic transistorfuture generationspolarization chargesresponse timesensorinterfaceUV photodetectorsdevice exhibitshealth monitoringnanoplateletpiezotronic effectcarrier transportZnO Twin Nanoplatelet High sensitivityAW
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