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Ultrasensitive Solution-Processed Broadband PbSe Photodetectors through Photomultiplication Effect
journal contribution
posted on 2019-02-05, 00:00 authored by Tao Zhu, Luyao Zheng, Xiang Yao, Lei Liu, Fei Huang, Yong Cao, Xiong GongBroadband photodetectors
have important applications in both scientific
and industrial sectors. In this study, we report room-temperature-operated
solution-processed photodetectors by PbSe quantum dots (QDs) with
spectral response from 350 to 2500 nm. In order to boost both external
quantum efficiency (EQE) and projected detectivity (D*), the hole-trap-assisted photomultiplication effect through the
EDT-PbSe QD/TABI PbSe QD double-thin-layer thin film, where EDT-PbSe
QDs are 1,2-ethanedithiol (EDT)-capped PbSe QDs and TABI-PbSe QDs
are tetrabutylammonium (TABI)-capped PbSe QDs, is applied. To further
enhance D*, a thin layer of the conjugated polyelectrolyte,
which offers significant hole injection resistance for suppressing
dark current but enhancing photocurrent under illumination due to
the photoinduced self-doping process, is applied for reengineering
the electron extraction layer in PbSe QD-based photodetectors. As
a result, at room temperature, PbSe QD-based photodetectors exhibit
over 450% EQE and over ∼1012 Jones D* in the visible region and over 120% EQE and D*
∼4 × 1011 Jones in the infrared region. These
results demonstrate that our studies provide a simple approach to
realize room-temperature-operated solution-processed broadband photodetectors.
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PbSe quantum dotshole injection resistanceUltrasensitive Solution-Processed Broadband PbSe PhotodetectorsEQE2500 nmhole-trap-assisted photomultiplication effectphotoinduced self-doping processPbSe QD-based photodetectorsroom-temperature-operated solution-processed broadband photodetectorsquantum efficiencyPbSe QD-based photodetectors exhibitPhotomultiplication Effect Broadband photodetectorsEDT-PbSe QDsTABI-PbSe QDsreport room-temperature-operated solution-processed photodetectorselectron extraction layerroom temperature
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