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Ultrafast Tracking of Exciton and Charge Carrier Transport in Optoelectronic Materials on the Nanometer Scale
journal contribution
posted on 2019-10-17, 14:41 authored by Christoph Schnedermann, Jooyoung Sung, Raj Pandya, Sachin Dev Verma, Richard Y. S. Chen, Nicolas Gauriot, Hope M. Bretscher, Philipp Kukura, Akshay RaoWe
present a novel optical transient absorption and reflection
microscope based on a diffraction-limited pump pulse in combination
with a wide-field probe pulse, for the spatiotemporal investigation
of ultrafast population transport in thin films. The microscope achieves
a temporal resolution down to 12 fs and simultaneously provides sub-10
nm spatial accuracy. We demonstrate the capabilities of the microscope
by revealing an ultrafast excited-state exciton population transport
of up to 32 nm in a thin film of pentacene and by tracking the carrier
motion in p-doped silicon. The use of few-cycle optical excitation
pulses enables impulsive stimulated Raman microspectroscopy, which
is used for in situ verification of the chemical identity in the 100–2000
cm–1 spectral window. Our methodology bridges the
gap between optical microscopy and spectroscopy, allowing for the
study of ultrafast transport properties down to the nanometer length
scale.
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methodology bridgesspatiotemporal investigationRaman microspectroscopyNanometer Scaleultrafast population transportwide-field probe pulseexcitation pulsesreflection microscopeultrafast transport propertiesOptoelectronic MaterialsfilmUltrafast Trackingcarrier motion32 nmchemical identityCharge Carrier Transportnanometer length scaleultrafast excited-state exciton population transport12 fssub -10 nmp-doped silicon
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