nl8b03520_si_001.pdf (1.5 MB)
Two-Dimensional Flexible High Diffusive Spin Circuits
Version 2 2019-01-10, 22:31
Version 1 2019-01-02, 18:23
journal contribution
posted on 2019-01-10, 22:31 authored by I. G. Serrano, J. Panda, Fernand Denoel, Örjan Vallin, Dibya Phuyal, Olof Karis, M. Venkata KamalakarOwing
to their unprecedented electronic properties, graphene and
two-dimensional (2D) crystals have brought fresh opportunities for
advances in planar spintronic devices. Graphene is an ideal medium
for spin transport while being an exceptionally resilient material
for flexible nanoelectronics. However, these extraordinary traits
have never been combined to create flexible graphene spin circuits.
Realizing such circuits could lead to bendable strain-spin sensors,
as well as a unique platform to explore pure spin current based operations
and low-power 2D flexible nanoelectronics. Here, we demonstrate graphene
spin circuits on flexible substrates for the first time. Despite the
rough topography of the flexible substrates, these circuits prepared
with chemical vapor deposited monolayer graphene reveal an efficient
room temperature spin transport with distinctively large spin diffusion
coefficients ∼0.2 m2 s–1. Compared
to earlier graphene devices on Si/SiO2 substrates, such
values are up to 20 times larger, leading to one order higher spin
signals and an enhanced spin diffusion length ∼10 μm
in graphene-based nonlocal spin valves fabricated using industry standard
systems. This high performance arising out of a characteristic substrate
terrain shows promise of a scalable and flexible platform towards
flexible 2D spintronics. Our innovation is a key step for the exploration
of strain-dependent 2D spin phenomena and paves the way for flexible
graphene spin memory–logic units and planar spin sensors.