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Transient Absorption Kinetics Associated with Higher Exciton States in Semiconducting Single-Walled Carbon Nanotubes: Relaxation of Excitons and Phonons
journal contribution
posted on 2013-10-03, 00:00 authored by Takeshi Koyama, Shohei Yoshimitsu, Yasumitsu Miyata, Hisanori Shinohara, Hideo Kishida, Arao NakamuraWe investigate the transient absorption
kinetics due to excitons
associated with the first and higher transition states in semiconducting
single-walled carbon nanotubes at high excitation densities by means
of femtosecond pump–probe spectroscopy. The time evolutions
of absorption changes associated with the first, second, and third
excitonic transition bands exhibit similar decay behavior; the decay
is much longer than the exciton population decay observed by time-resolved
luminescence measurements. From spectral shape analysis of the transient
absorption spectra, it is found that the absorption change in the
short time regime (<∼2 ps) is mainly due to the bimolecular
Auger recombination process, reflecting the exciton population decay.
The long-lasting decay behavior over ∼1 ns is attributed to
the thermalization process of phonons generated during the inter-
and intraband relaxation of excitons promoted to higher states by
the Auger recombination process and the subsequent thermal diffusion
to the surrounding surfactant and solvent.