nl6b04332_si_001.pdf (1.74 MB)
Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics
journal contribution
posted on 2017-01-10, 00:00 authored by Che Chen, Nathan Youngblood, Ruoming Peng, Daehan Yoo, Daniel A. Mohr, Timothy W. Johnson, Sang-Hyun Oh, Mo LiWe demonstrate the integration of
a black phosphorus photodetector in a hybrid, three-dimensional architecture
of silicon photonics and metallic nanoplasmonics structures. This
integration approach combines the advantages of the low propagation
loss of silicon waveguides, high-field confinement of a plasmonic
nanogap, and the narrow bandgap of black phosphorus to achieve high
responsivity for detection of telecom-band, near-infrared light. Benefiting
from an ultrashort channel (∼60 nm) and near-field enhancement
enabled by the nanogap structure, the photodetector shows an intrinsic
responsivity as high as 10 A/W afforded by internal gain mechanisms,
and a 3 dB roll-off frequency of 150 MHz. This device demonstrates
a promising approach for on-chip integration of three distinctive
photonic systems, which, as a generic platform, may lead to future
nanophotonic applications for biosensing, nonlinear optics, and optical
signal processing.
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high-field confinementnear-infrared lightsilicon waveguides150 MHznanogap structurefuture nanophotonic applicationspropagation lossnear-field enhancementgain mechanismsphotonic systemsBlack Phosphorus Photodetectorplasmonic nanogapsignal processingnonlinear opticsnanoplasmonics structuresThree-Dimensional Integrationphosphorus photodetectorintegration approachSilicon Photonicssilicon photonicson-chip integration3 dB roll-off frequencyresponsivity
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