Thickness-Dependent Thermal Conductivity of Suspended Two-Dimensional Single-Crystal In2Se3 Layers Grown by Chemical Vapor Deposition
2016-02-17T00:00:00Z (GMT) by
Using micro-Raman spectroscopy and finite-element simulations, we determine the in-plane thermal conductivity of suspended two-dimensional single-crystal In2Se3 grown by chemical vapor deposition. The thermal conductivity shows a strong dependence on the layer thickness: it reaches ∼60 W/m·K at the thickness of 35 nm, and it decreases to ∼4 W/m·K for the 5 nm thick layer. This dependence demonstrates the significance of phonon surface scattering and also indicates changes to the phonon dispersion relations as the layer thickness decreases. The determination of the thickness-dependent thermal conductivity provides an important practical basis for advancing 2D In2Se3-based device technologies and, more generally, also enables fundamental insight into the limiting mechanisms for 2D thermal transport.
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