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Synthesis of Large Area Two-Dimensional MoS2 Films by Sulfurization of Atomic Layer Deposited MoO3 Thin Film for Nanoelectronic Applications
journal contribution
posted on 2019-12-02, 22:44 authored by R. I. Romanov, M. G. Kozodaev, D. I. Myakota, A. G. Chernikova, S. M. Novikov, V. S. Volkov, A. S. Slavich, S. S. Zarubin, P. S. Chizhov, R. R. Khakimov, A. A. Chouprik, C. S. Hwang, A. M. MarkeevThe feasibility of growing atomically thin MoS2 films
(down to two monolayers) on several tens of cm2 area was
demonstrated by first depositing the MoO3 thin film by
using an atomic layer deposition and subsequent sulfurization at temperatures
ranging from 500 to 1000 °C. The effect of sulfurization temperature
on properties of thin MoS2 films was investigated in details.
It was found that the annealing of the MoO3 film under
the elemental sulfur vapor condition allows effective sulfurization
from 500 °C, at which the converted MoS2 film contained
a rather high concentration of elemental sulfur which might reside
at the boundaries between the relatively low-crystallized edge-on
MoS2 grains. The increase in sulfurization temperature
from 500 to 1000 °C results in a significant grain size growth
from ∼10 up to >∼100 nm, with the change of the edge-on
grains to the flat grains with their (0001) planes being parallel
to the sapphire substrate. Raman spectroscopy investigations also
indicated that the defect concentration decreased with the increasing
sulfurization temperature. The films obtained by the sulfurization
at lower temperatures (500–700 °C) may have high catalytic
activity, whereas the highly (0001) aligned films obtained at higher
temperatures (900–1000 °C) could be useful for high functionality
electronic applications, which was successfully demonstrated by their
combination with thin ferroelectric HfO2-based film. Thus,
the noticeable remnant polarization value and a good switching endurance
were obtained directly in contact with MoS2 film, allowing
to conclude the possibility of the memory MoS2-based FeFET
concept realization.
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Atomic Layer Deposited MoO 3MoS 2 filmsRaman spectroscopy investigationsFeFET concept realizationsulfurization temperaturelow-crystallized edge-on MoS 2 grainsremnant polarization valuememory MoS 2sulfur vapor conditionMoO 3 filmMoS 2 filmLarge Area Two-Dimensional MoS 2 Filmsgrain size growthcm 2 area
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