Synthesis of In₂O₃ Nanowire-Decorated Ga₂O₃ Nanobelt Heterostructures and Their Electrical and Field-Emission Properties

We report on the synthesis of In₂O₃ nanowire-decorated Ga₂O₃ nanobelt heterostructures via a simple catalyst-free method. A typical heterostructure, where an In₂O₃ nanowire forms a sort of a “dorsal fin” on the Ga₂O₃ nanobelt, exhibits the T-shaped cross-section. The structure, electrical porperties, and field-emission properties of this material are systematically investigated. The heterostructures possess a typical n-type semiconducting behavior with enhanced conductivity. Field-emission measurements show that they have a low turn-on field (∼1.31 V/μm) and a high field-enhancement factor (over 4000). The excellent field-emission characteristics are attributed to their special geometry and good electrical properties. The present In₂O₃-decorated Ga₂O₃ heterostructures are envisaged to be decent field-emitters useful in advanced electronic and optoelectronic nanodevices.