Synthesis of In<sub>2</sub>O<sub>3</sub> Nanowire-Decorated Ga<sub>2</sub>O<sub>3</sub> Nanobelt Heterostructures and Their Electrical and Field-Emission Properties

We report on the synthesis of In<sub>2</sub>O<sub>3</sub> nanowire-decorated Ga<sub>2</sub>O<sub>3</sub> nanobelt heterostructures via a simple catalyst-free method. A typical heterostructure, where an In<sub>2</sub>O<sub>3</sub> nanowire forms a sort of a “dorsal fin” on the Ga<sub>2</sub>O<sub>3</sub> nanobelt, exhibits the T-shaped cross-section. The structure, electrical porperties, and field-emission properties of this material are systematically investigated. The heterostructures possess a typical n-type semiconducting behavior with enhanced conductivity. Field-emission measurements show that they have a low turn-on field (∼1.31 V/μm) and a high field-enhancement factor (over 4000). The excellent field-emission characteristics are attributed to their special geometry and good electrical properties. The present In<sub>2</sub>O<sub>3</sub>-decorated Ga<sub>2</sub>O<sub>3</sub> heterostructures are envisaged to be decent field-emitters useful in advanced electronic and optoelectronic nanodevices.