jz3020875_si_001.pdf (1.16 MB)
Surface Chemistry Exchange of Alloyed Germanium Nanocrystals: A Pathway Toward Conductive Group IV Nanocrystal Films
journal contribution
posted on 2015-12-16, 22:23 authored by Daniel A. Ruddy, Peter T. Erslev, Susan
E. Habas, Jason A. Seabold, Nathan R. NealeWe present an expansion of the mixed-valence iodide reduction
method
for the synthesis of Ge nanocrystals (NCs) to incorporate low levels
(∼1 mol %) of groups III, IV, and V elements to yield main-group
element-alloyed Ge NCs (Ge1–xEx NCs). Nearly every main-group element (E)
that surrounds Ge on the periodic table (Al, P, Ga, As, In, Sn, and
Sb) may be incorporated into Ge1–xEx NCs with remarkably high E incorporation
into the product (>45% of E added to the reaction). Importantly,
surface
chemistry modification via ligand exchange allowed conductive films
of Ge1–xEx NCs to be prepared, which exhibit conductivities over large
distances (25 μm) relevant to optoelectronic device development
of group IV NC thin films.