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Study of Direct Tunneling and Dielectric Breakdown in Molecular Beam Epitaxial Hexagonal Boron Nitride Monolayers Using Metal–Insulator–Metal Devices
journal contribution
posted on 2020-03-13, 13:33 authored by Zhenjun Cui, Yanwei He, Hao Tian, Alireza Khanaki, Long Xu, Wenhao Shi, Jianlin LiuDirect tunneling
and dielectric breakdown in molecular beam epitaxial
hexagonal boron nitride (h-BN) monolayers were studied based on Ni/h-BN/Ni
metal–insulator–metal (MIM) device structures. Effective
tunneling areas are orders of magnitude smaller than physical areas
of the devices. Statistical Weibull analysis of the breakdown characteristics
shows that the breakdown area-scaling law applies to effective areas
rather than physical areas of the devices. The h-BN monolayer MIM
devices can sustain repeated dc voltage sweeping stresses up to 85
times under an extremely high compliance current of 100 mA, and the
critical electric field is determined to be at least 11.8 MV/cm, demonstrating
high dielectric strength and reliability of these h-BN monolayers.
The mechanism of breakdown and recovery of the h-BN monolayer MIM
devices is also discussed.
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dielectric breakdowndielectric strengthbreakdown area-scaling law100 mAdc voltageMolecular Beam Epitaxial Hexagonal Boron Nitride MonolayersMVDirect Tunneling85 timesboron nitrideDielectric Breakdownh-BN monolayer MIM devicesh-BN monolayersStatistical Weibull analysisdevice structuresbreakdown characteristicsEffective tunneling areasbeam epitaxial
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