jz0c00511_si_001.pdf (1.06 MB)
Single-Photon Emission from Point Defects in Aluminum Nitride Films
journal contribution
posted on 2020-03-23, 17:04 authored by Yongzhou Xue, Hui Wang, Nan Xie, Qian Yang, Fujun Xu, Bo Shen, Jun-jie Shi, Desheng Jiang, Xiuming Dou, Tongjun Yu, Bao-quan SunQuantum
technologies require robust and photostable single-photon
emitters. Here, room temperature operated single-photon emissions
from isolated defects in aluminum nitride (AlN) films are reported.
AlN films were grown on nanopatterned sapphire substrates by metal
organic chemical vapor deposition. The observed emission lines range
from visible to near-infrared, with highly linear polarization characteristics.
The temperature-dependent line width increase shows T3 or
single-exponential behavior. First-principle calculations based on
density functional theory show that point defect species, such as
antisite nitrogen vacancy complex (NAlVN) and
divacancy (VAlVN) complexes, are considered
to be an important physical origin of observed emission lines ranging
from approximately 550 to 1000 nm. The results provide a new platform
for on-chip quantum sources.
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First-principle calculationsPoint DefectsN Al V NAluminum Nitride Films Quantum technologiesSingle-Photon Emissionnanopatterned sapphire substratesAlN filmspolarization characteristicsaluminum nitridesingle-photon emissionstemperature-dependent line width increasepoint defect speciesphotostable single-photon emitterssingle-exponential behavior1000 nmantisite nitrogen vacancyV Al V Non-chip quantum sourceschemical vapor depositiontheory showT 3emission lines rangeemission linesroom temperature
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