am0c03656_si_001.pdf (2.16 MB)
Selective Synthesis of Bi2Te3/WS2 Heterostructures with Strong Interlayer Coupling
journal contribution
posted on 2020-06-19, 12:35 authored by Ethan Kahn, Michael Lucking, Fu Zhang, Yu Lei, Tomotaroh Granzier-Nakajima, Daniel Grasseschi, Kory Beach, William Murray, Yin-Ting Yeh, Ana Laura Elias, Zhiwen Liu, Humberto Terrones, Mauricio TerronesThe
vertical integration of atomically thin-layered materials to
create van der Waals heterostructures (vdWHs) has been proposed as
a method to design nanostructures with emergent properties. In this
work, epitaxial Bi2Te3/WS2 vdWHs
are synthesized via a two-step vapor deposition process. It is calculated
that the vdWH has an indirect band gap with a valence band edge that
bridges the vdW gap, resulting in a quenched photoluminescence (PL)
from the WS2 monolayer, reduced intensity of its resonance
Raman vibrational peaks, improved vertical charge transport, and a
decrease in the intensity of second harmonic generation (SHG). Furthermore,
it is observed that induced defects strongly influence the nucleation
and growth of vdWHs. By creating point defects in WS2 monolayers,
it is shown that the growth of Bi2Te3 platelets
can be patterned. This work offers important insights into the synthesis,
defect engineering, and moiré engineering of an emerging class
of two-dimensional (2D) heterostructures.
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Keywords
charge transportSHGintensityStrong Interlayerband gapvalence band edgeBi 2 Te 3 plateletsatomically thin-layered materialsPLvan der Waals heterostructuresvdWHpoint defectsdesign nanostructuresdefect engineeringresonance Raman vibrational peaksWS 2 monolayersquenched photoluminescenceWS 2 monolayervapor deposition processSelective SynthesisvdW gap
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