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Red Emission of InGaN/GaN Double Heterostructures on GaN Nanopyramid Structures
journal contribution
posted on 2015-04-15, 00:00 authored by Young-Ho Ko, Je-Hyung Kim, Su-Hyun Gong, Joosung Kim, Taek Kim, Yong-Hoon ChoWe fabricated InGaN double-hetero
structure (DHS) on the nanosized
pyramid structure and successfully demonstrated efficient red color
emission at 650 nm from this unique structure. The nanosized pyramid
structure was fabricated by selective area growth method with nanoimprint.
The different diffusion length of composite atoms and compositional
pulling effect on the pyramid structure gave rise to not only compositional
variation, but also high In-content InGaN of more than 40%. The InGaN
DHS on nanopyramids shows high internal quantum efficiency, sub-ns
fast recombination time (negligible built-in electric fields), and
less efficiency droop even with the high In content. These results
are important to realize efficient red emission based on InGaN material,
providing possibilities for efficient photonic devices operating at
the long wavelength visible region.