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Pressure-Dependent Growth of Wafer-Scale Few-layer h‑BN by Metal–Organic Chemical Vapor Deposition
journal contribution
posted on 2017-03-22, 00:00 authored by Dong Yeong Kim, Nam Han, Hokyeong Jeong, Jaewon Kim, Sunyong Hwang, Kyung Song, Si-Young Choi, Jong Kyu KimA few-layer
hexagonal boron nitride (h-BN) films with wafer-scale
thickness uniformity were grown by using a multiwafer metal–organic
chemical vapor deposition (MOCVD) system at relatively low temperature
of 1050 °C under various reactor pressures. The effect of the
reactor pressure on the structural properties of the h-BN films was
systematically investigated by various spectroscopic and microscopic
analysis tools including near-edge X-ray absorption fine structure
spectroscopy and transmission electron microscopy. We found that the
defects in the MOCVD-grown h-BN films such as nitrogen vacancies and
grain boundaries were strongly affected by the reactor pressure, which
was elucidated by pressure-dependent change of Gibbs free energy for
the nuclei formation and reaction rates. Based on our experimental
observations, the growth strategies were discussed for realization
of high-quality, multiwafer-scale uniformity h-BN films grown by MOCVD
at temperature of 1050 °C.