jz7b01029_si_001.pdf (1.97 MB)
Phase-Engineering-Induced Generation and Control of Highly Anisotropic and Robust Excitons in Few-Layer ReS2
journal contribution
posted on 2017-06-05, 00:00 authored by Shuyi Wu, Yun Shan, Junhong Guo, Lizhe Liu, Xiaoxu Liu, Xiaobin Zhu, Jinlei Zhang, Jiancang Shen, Shijie Xiong, Xinglong WuThe anisotropic exciton
behavior in two-dimensional materials induced
by spin–orbit coupling or anisotropic spatial confinement has
been exploited in imaging applications. Herein, we propose a new strategy
to generate high-energy and robust anisotropic excitons in few-layer
ReS2 nanosheets by phase engineering. This approach overcomes
the limitation imposed by the layer thickness, enabling production
of visible polarized photoluminescence at room temperature. Ultrasonic
chemical exfoliation is implemented to introduce the metallic T phase
of ReS2 into the few-layer semiconducting Td nanosheets.
In this configuration, light excitation can readily produce “hot”
electrons to tunnel to the Td phase via the metal–semiconductor
interface to enhance the overlap between the wave functions and screened
Coulomb interactions. Owing to the strong electron–hole interaction,
significant increase in the optical band gap is observed. Highly anisotropic
and tightly bound excitons with visible light emission (1.5–2.25
eV) are produced and can be controlled by tailoring the T phase concentration.
This novel strategy allows manipulation of polarized optical information
and has great potential in optoelectronic devices.
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Robust Excitonsband gapnovel strategyUltrasonic chemical exfoliationPhase-Engineering-Induced Generationanisotropic exciton behaviorTd phasewave functionsT phasephase engineeringReS 2imaging applicationslight excitationCoulomb interactionsfew-layer ReS 2 nanosheetsanisotropic excitonsFew-Layer ReS 2layer thicknessT phase concentrationfew-layer semiconducting Td nanosheetsoptoelectronic devicesroom temperature
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