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Origin of Indium Diffusion in High‑k Oxide HfO2
journal contribution
posted on 2016-03-04, 00:00 authored by Yaoqiao Hu, Changhong Wang, Hong Dong, Robert
M. Wallace, Kyeongjae Cho, Wei-Hua Wang, Weichao WangIndium (In) out-diffusion through
high-k oxides
severely undermines the thermal reliability of the next generation
device of III-V/high-k based metal oxide semiconductor
(MOS). To date, the microscopic mechanism of In diffusion is not yet
fully understood. Here, we utilize angle resolved X-ray photoelectron
spectroscopy (ARXPS) and density functional theory (DFT) to explore
In diffusion in high-k oxide HfO2. Our
ARXPS results confirm the In diffusion through as-prepared and annealed
HfO2 grown on InP substrate. The theoretical results show
that the In diffusion barrier is reduced to ∼0.88 eV in the
presence of oxygen vacancies (VO), whereas
this barrier is as high as ∼4.78 eV in pristine HfO2. Fundamentally, we found that the high feasibility of In diffusion
is owing to In nonbonding with its neighboring atoms. These findings
can be extended to understand the In diffusion in other materials
in addition to HfO2.