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One-Step Incorporation of Nitrogen and Vanadium between Ti3C2Tx MXene Interlayers Enhances Lithium Ion Storage Capability
journal contribution
posted on 2020-03-04, 22:03 authored by Renfei Cheng, Zuohua Wang, Cong Cui, Tao Hu, Bingbing Fan, Hailong Wang, Yan Liang, Chao Zhang, Hongwang Zhang, Xiaohui WangTwo-dimensional (2D)
transition-metal carbide materials termed
MXene have attracted huge attention in the field of electrochemical
energy storage. To this end, MXenes whose capability depends on the
M transition elements represent a new paradigm extending beyond the
realm of oft-explored elemental 2D materials beginning with graphene.
However, the as-prepared MXenes suffer from unsatisfied capability
due to the loss M elements during the etching process for the preparation
of MXenes. Here, taking Ti3C2Tx as an example, we demonstrate that
nitrogen and vanadium incorporation by means of microwave irradiation
in NH4VO3-containing ethylene glycol can significantly
improve the electrochemical performance of multilayered Ti3C2Tx MXene.
While maintaining the 2D structure of MXene layers, the N and V elements
are incorporated between the Ti3C2Tx MXene interlayers in the forms of C–V–OH,
C–V–O, V–O, and Ti–O–N species.
Specifically, at a V:Ti atomic ratio of about 1:30 (N:Ti = 0.29),
N and V incorporation between the Ti3C2Tx interlayers gives rise to
an increase in capability by about 40%, corresponding to an impressive
reversible capacity of 92 mA h g–1 at 3 C rate after
1000 cycles. These results demonstrate that N (V)-incorporated Ti3C2Tx MXenes offer fascinating potential for high-performance electrode
materials and provide guidelines for designing and engineering anode
materials.
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Ti 3 C 2 T x interlayers2 D structureTi 3 C 2 T x MXene interlayersmicrowave irradiationethylene glycolvanadium incorporationtransition-metal carbide materialsV incorporationelectrochemical energy storageengineering anode materialsOne-Step Incorporationelectrochemical performanceTi 3 C 2 T x MXeneelectrode materialsM transition elementsNH 4 VO 31000 cyclesV elements3 C rateetching processloss M elements2 D materialsas-prepared MXenesTi 3 C 2 T xMXene layers
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