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Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperature

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posted on 2020-05-25, 15:04 authored by Po-Yi Chang, Ching-Fu Lin, Samer El Khoury Rouphael, Ting-Hsuan Huang, Chang-Mao Wu, Dominique Berling, Ping-Hung Yeh, Chia-Jung Lu, Hsin-Fei Meng, Hsiao-Wen Zan, Olivier Soppera
A metal-oxide material (indium zinc oxide [IZO]) device with near-infrared (NIR) laser annealing was demonstrated on both glass and bendable plastic substrates (polycarbonate, polyethylene, and polyethylene terephthalate). After only 60 s, the sheet resistance of IZO films annealed with a laser was comparable to that of thermal-annealed devices at temperatures in the range of 200–300 °C (1 h). XPS, ATR, and AFM were used to investigate the changes in the sheet resistance and correlate them to the composition and morphology of the thin film. Finally, the NIR-laser-annealed IZO films were demonstrated to be capable of detecting changes in humidity and serving as a highly sensitive gas sensor of hydrogen sulfide (in ppb concentration), with room-temperature operation on a bendable substrate.

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