am0c03257_si_001.pdf (850.75 kB)
Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperature
journal contribution
posted on 2020-05-25, 15:04 authored by Po-Yi Chang, Ching-Fu Lin, Samer El Khoury Rouphael, Ting-Hsuan Huang, Chang-Mao Wu, Dominique Berling, Ping-Hung Yeh, Chia-Jung Lu, Hsin-Fei Meng, Hsiao-Wen Zan, Olivier SopperaA metal-oxide
material (indium zinc oxide [IZO]) device with near-infrared (NIR)
laser annealing was demonstrated on both glass and bendable plastic
substrates (polycarbonate, polyethylene, and polyethylene terephthalate).
After only 60 s, the sheet resistance of IZO films annealed with a
laser was comparable to that of thermal-annealed devices at temperatures
in the range of 200–300 °C (1 h). XPS, ATR, and AFM were
used to investigate the changes in the sheet resistance and correlate
them to the composition and morphology of the thin film. Finally,
the NIR-laser-annealed IZO films were demonstrated to be capable of
detecting changes in humidity and serving as a highly sensitive gas
sensor of hydrogen sulfide (in ppb concentration), with room-temperature
operation on a bendable substrate.