nn8b02193_si_002.mpg (2.88 MB)
Nanoscale Conductive Filament with Alternating Rectification as an Artificial Synapse Building Block
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posted on 2018-05-24, 00:00 authored by Dan Berco, Yu Zhou, Sankara Rao Gollu, Pranav Sairam Kalaga, Abhisek Kole, Mohamed Hassan, Diing Shenp AngA popular approach
for resistive memory (RRAM)-based hardware implementation
of neural networks utilizes one (or two) device that functions as
an analog synapse in a crossbar structure of perpendicular pre- and
postsynaptic neurons. An ideal fully automated, large-scale artificial
neural network, which matches a biologic counterpart (in terms of
density and energy consumption), thus requires nanosized, extremely
low power devices with a wide dynamic range and multilevel functionality.
Unfortunately the trade-off between these traits proves to be a serious
obstacle in the realization of brain-inspired computing platforms
yet to be overcome. This study demonstrates an alternative manner
for the implementation of artificial synapses in which the local stoichiometry
of metal oxide materials is delicately manipulated to form a single
nanoscale conductive filament that may be used as a synaptic gap building
block in an equivalent manner to the functionality of a single connexon
(a signaling pore between synapses) with dynamic rectification direction.
The structure, of a few nanometers in size, is based on the formation
of defect states and shows current rectification properties that can
be consecutively flipped to a forward or reverse direction to create
either an excitatory or inhibitory (positive or negative) weight parameter.
Alternatively, a plurality of these artificial connexons may be used
to create a synthetic rectifying synaptic gap junction. In addition,
the junction plasticity may be altered in a differential digital scheme
(opposed to conventional analog RRAM conductivity manipulation) by
changing the ratio of forward to reverse rectifying connexons.
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synapsespower devicesimplementationNanoscale Conductive Filamentanalog synapsecrossbar structureanalog RRAM conductivity manipulationsynaptic gap junctionnanoscale conductive filamentjunction plasticityrectification directionalternative mannerrectification propertiessynaptic gap building blockequivalent mannermetal oxide materialsconnexonpostsynaptic neuronsArtificial Synapse Building Blockdefect statesfunctionalityweight parameter
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