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Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction
journal contribution
posted on 2018-09-07, 00:00 authored by Sock Mui Poh, Sherman Jun Rong Tan, Han Wang, Peng Song, Irfan H. Abidi, Xiaoxu Zhao, Jiadong Dan, Jingsheng Chen, Zhengtang Luo, Stephen J. Pennycook, Antonio H. Castro Neto, Kian Ping LohFerroelectric thin
film has attracted great interest for nonvolatile
memory applications and can be used in either ferroelectric Schottky
diodes or ferroelectric tunneling junctions due to its promise of
fast switching speed, high on-to-off ratio, and nondestructive readout.
Two-dimensional α-phase indium selenide (In2Se3), which has a modest band gap and robust ferroelectric properties
stabilized by dipole locking, is an excellent candidate for multidirectional
piezoelectric and switchable photodiode applications. However, the
large-scale synthesis of this material is still elusive, and its performance
as a ferroresistive memory junction is rarely reported. Here, we report
the low-temperature molecular-beam epitaxy (MBE) of large-area monolayer
α-In2Se3 on graphene and demonstrate the
use of α-In2Se3 on graphene in ferroelectric
Schottky diode junctions by employing high-work-function gold as the
top electrode. The polarization-modulated Schottky barrier formed
at the interface exhibits a giant electroresistance ratio of 3.9 ×
106 with a readout current density of >12 A/cm2, which is more than 200% higher than the state-of-the-art technology.
Our MBE growth method allows a high-quality ultrathin film of In2Se3 to be heteroepitaxially grown on graphene,
thereby simplifying the fabrication of high-performance 2D ferroelectric
junctions for ferroresistive memory applications.
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Keywords
band gaphigh-work-function goldSchottky diode junctionsultrathin filmGiant Electroresistance SwitchingSchottky diodesreadout2 D2 Se 3ferroresistive memory junctionFerroresistive Memory Junction Ferroelectricpolarization-modulated Schottky barrierferroresistive memory applicationsinterface exhibitsMBE growth methodTwo-dimensional α- phase indium selenidegiant electroresistance ratiomonolayer α-molecular-beam epitaxyon-to-off ratiographeneswitchable photodiode applicationstunneling junctionsnonvolatile memory applicationsMolecular-Beam Epitaxy
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