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Mechanical Control of Electroresistive Switching

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journal contribution
posted on 11.09.2013 by Yunseok Kim, Simon J. Kelly, Anna Morozovska, Ehsan Kabiri Rahani, Evgheni Strelcov, Eugene Eliseev, Stephen Jesse, Michael D. Biegalski, Nina Balke, Nicole Benedek, Dmitri Strukov, J. Aarts, Inrok Hwang, Sungtaek Oh, Jin Sik Choi, Taekjib Choi, Bae Ho Park, Vivek B. Shenoy, Peter Maksymovych, Sergei V. Kalinin
Hysteretic metal–insulator transitions (MIT) mediated by ionic dynamics or ferroic phase transitions underpin emergent applications for nonvolatile memories and logic devices. The vast majority of applications and studies have explored the MIT coupled to the electric field or temperarture. Here, we argue that MIT coupled to ionic dynamics should be controlled by mechanical stimuli, the behavior we refer to as the piezochemical effect. We verify this effect experimentally and demonstrate that it allows both studying materials physics and enabling novel data storage technologies with mechanical writing and current-based readout.

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