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Mechanical-Induced Polarization Switching in Relaxor Ferroelectric Single Crystals
journal contribution
posted on 2019-10-17, 19:44 authored by Jihong Bian, Yuting Wang, Ren Zhu, Lei Wang, Bian Yang, Jianwei Wang, Dawei Zhang, Congcong Xu, Tao Li, Dwight Viehland, Yaodong YangControl
of coupling between electric and elastic orders in ferroelectric
bulks is vital to understand their nature and enrich the multifunctionality
of polarization manipulation applied in domain-based electronic devices
such as ferroelectric memories and data storage ones. Herein, taking
(1 – x%)Pb(Mg1/3Nb2/3)O3–x%PbTiO3 (PMN–x%PT, x = 32, 40) as the prototype, we
demonstrate the less-explored mechanical switching in relaxor ferroelectric
single crystals using scanning probe microscopy. Low mechanical forces
can induce metastable and electrically erasable polarization reversal
clearly from electrical-created bipolar domains around the 180°
domain wall in monoclinic PMN–32%PT and inside the c+ domain
in tetragonal PMN–40%PT. The mechanical switching evolutions
show force/time dependence and time-force equivalence. The time-dependent
mechanical switching behavior stems from the participation and contribution
of polar nanoregions. Flexoelectricity and bulk Vegard strain effect
can account for the mechanical switching but notably, the former in
the two has very different origins. These investigations exhibit the
possibility of mechanical switching as a tool to manipulate polarization
states in ferroelectric bulks, and provide the potential of these
crystals as substrates in mechanical polarization control of future
thin-film devices.
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Keywords
polarization reversalpolarization manipulationPTelectrical-created bipolar domainspolarization statesscanning probe microscopyinvestigations exhibitfuture thin-film devicesbulk Vegard strain effectPMNdata storage onestime-force equivalencecrystalRelaxor Ferroelectric Single Crystals ControlMechanical-Induced Polarization Switchingpolarization control
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