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Low-Dimensional Semiconductor Superlattices Formed by Geometric Control over Nanocrystal Attachment
journal contribution
posted on 2013-06-12, 00:00 authored by Wiel H. Evers, Bart Goris, Sara Bals, Marianna Casavola, Joost de Graaf, René van Roij, Marjolein Dijkstra, Daniël VanmaekelberghOriented attachment, the process in which nanometer-sized
crystals
fuse by atomic bonding of specific crystal facets, is expected to
be more difficult to control than nanocrystal self-assembly that is
driven by entropic factors or weak van der Waals attractions. Here,
we present a study of oriented attachment of PbSe nanocrystals that
counteract this tuition. The reaction was studied in a thin film of
the suspension casted on an immiscible liquid at a given temperature.
We report that attachment can be controlled such that it occurs with
one type of facets exclusively. By control of the temperature and
particle concentration we obtain one- or two-dimensional PbSe single
crystals, the latter with a honeycomb or square superimposed periodicity
in the nanometer range. We demonstrate the ability to convert these
PbSe superstructures into other semiconductor compounds with the preservation
of crystallinity and geometry.
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nanocrystal self-assemblyvan der Waals attractionscrystal facetsnanometer-sized crystals fusesemiconductor compoundsnanometer rangeGeometric Controlsuspension castedLow-Dimensional Semiconductor Superlatticesparticle concentrationNanocrystal Attachment Oriented attachmentPbSe nanocrystalsPbSe superstructuresentropic factors
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