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Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation
journal contribution
posted on 2020-03-31, 18:07 authored by Tao Liang, Mohammad Rezwan Habib, Han Xiao, Shuang Xie, Yuhan Kong, Cui Yu, Hideo Iwai, Daisuke Fujita, Nobutaka Hanagata, Hongzheng Chen, Zhihong Feng, Mingsheng XuHeterogeneous atom
doping has been proven as an efficient route
to tune the physical and chemical properties of semiconductors, represented
by the technically mature boron and phosphorus doping in bulk silicon.
In the two-dimensional (2D) transitional-metal dichalcogenides semiconductors,
substitutional doping dominates compared with the interstitial sites
doping due to the ultrathin nature of 2D materials. However, unintentional
doping can also obscure the structure–property relationship
and cause the deviations from the ideally optical/electrical performances.
Here, substitutional carbon doping into the monolayer molybdenum disulfide
(MoS2) lattice during the normal chemical vapor deposition
(CVD) synthesis process is discovered through a thorough analysis
of the intermediate and final reaction products. The carbon originates
from the relatively low-purity molybdenum precursor, which can be
completely eliminated when a high-purity molybdenum precursor is utilized.
The carbon-doped monolayer MoS2 exhibits mid-gap states
brought by the Mo-d, S-p, and C-p orbital hybridization and gradually reduced band gaps
as the doping concentration increases. As a result, the suppressed
photoluminescence (PL) intensity and red shift PL position are observed.
The finding is fundamental for understanding the unintentional carbon
doping process in CVD growth of 2D semiconductors and identifies a
source for the inconsistent PL performances in the CVD-derived samples.
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Keywords
substitutional carbon doping2 D semiconductorsbulk siliconsynthesis processshift PL positionIntrinsically Substitutional Carbon DopingCVD-derived samplesmonolayer molybdenum disulfidephosphorus dopingchemical propertiesMoS 2doping concentration increasessubstitutional dopingultrathin naturePL performancescarbon doping processmolybdenum precursorcarbon-doped monolayer MoS 2 exhibits mid-gap statessites dopingCVD growthchemical vapor depositiontransitional-metal dichalcogenides semiconductors2 D materialsreaction productsBand Structure Modulation Heterogeneous atom dopinglow-purity molybdenum precursorband gapsCVD-Grown Monolayer MoS 2
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