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Interfacial Electromechanics Predicts Phase Behavior of 2D Hybrid Halide Perovskites
journal contribution
posted on 2020-02-25, 17:07 authored by Christopher
C. Price, Jean-Christophe Blancon, Aditya D. Mohite, Vivek B. ShenoyQuasi-two-dimensional
(2D) mixed-cation hybrid halide perovskites
(A′2AN–1MNX3N+1; A′
= large organic molecule with cationic group, A = [Cs+,
CH3NH3+, HC(NH2)2+], M = [Pb, Sn, Ge], X = [I–, Br–, Cl–]) have rapidly emerged as candidates
to improve the structural stability and device lifetime of 3D perovskite
semiconductor devices under operating conditions. The addition of
the large A′ cation to the traditional AMX3 structure
introduces several synthetic degrees of freedom and breaks M–X
bonds, giving rise to peculiar critical phase behavior in the phase
space of these complex materials. In this work, we propose a thermodynamic
model parametrized by first-principles calculations to generate the
phase diagram of 2D and quasi-2D perovskites (q-2DPKs) based on the
mechanics and electrostatics of the interface between the A′
cations and the metal halide octahedral network. Focusing on the most
commonly studied methylammonium lead iodide system where A′
is n-butylammonium (BA; CH3(CH2)3NH3+), we find that the apparent
difficulty in synthesizing phase-pure samples with a stoichiometric
index N > 5 can be attributed to the energetic
competition
between repulsion of opposing interfacial dipole layers and mechanical
relaxation induced by interfacial stress. Our model shows quantitative
agreement with experimental observations of the maximum phase-pure
stoichiometric index (Ncrit) and explains
the nonmonotonic evolution of the lattice parameters with increasing
stoichiometric index (N). This model is generalizable
to the entire family of q-2DPKs and can guide the design of photovoltaic
and optical materials that combine the structural stability of the
q-2DPKs while retaining the charge carrier properties of their 3D
counterparts.
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Keywords
BAstabilityInterfacial Electromechanics Predicts Phase Behaviormaterialq -2DPKsHCcharge carrier propertiesAMX 3 structure3 D counterpartsmetal halide octahedral networkphase-pure stoichiometric indexCH 3 NH 33 NH 3stoichiometric index Nsynthesizing phase-pure samplescation3 D perovskite semiconductor devicesquasi -2D perovskitesmodel
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