jp308895e_si_001.pdf (670.13 kB)
In Situ Cycle-by-Cycle Flash Annealing of Atomic Layer Deposited Materials
journal contribution
posted on 2012-11-15, 00:00 authored by Michael C. Langston, Neil P. Dasgupta, Hee Joon Jung, Manca Logar, Yu Huang, Robert Sinclair, Fritz
B. PrinzThis work establishes a modified atomic layer deposition
(ALD)
method, adding a rapid high temperature annealing step during every
cycle of deposition without adding significant time to the overall
reaction. To achieve the ultrafast heating requirement, an in situ
flash lamp annealing (FLA) apparatus was designed and integrated into
the lid of an ALD chamber. The FLA ALD technique was applied to modify
the morphology and crystallinity of as-deposited PbS quantum dot (QD)
structures and thin TiO2 films. The ability to control
the PbS QD size, shape, and standard deviation in size as a function
of FLA conditions was observed. Furthermore, the FLA technique enabled
the direct ALD growth of crystalline TiO2 thin films, which
were amorphous as-deposited. This technique provides a new opportunity
to facilitate diffusion and crystallization throughout the ALD growth
process while maintaining the low temperatures required during the
self-limiting surface reactions.