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Highly Sensitive Flexible Pressure Sensors Based on Printed Organic Transistors with Centro-Apically Self-Organized Organic Semiconductor Microstructures
journal contribution
posted on 2017-11-15, 00:00 authored by So Young Yeo, Sangsik Park, Yeon Jin Yi, Do Hwan Kim, Jung Ah LimA highly
sensitive pressure sensor based on printed organic transistors with
three-dimensionally self-organized organic semiconductor microstructures
(3D OSCs) was demonstrated. A unique organic transistor with semiconductor
channels positioned at the highest summit of printed cylindrical microstructures
was achieved simply by printing an organic semiconductor and polymer
blend on the plastic substrate without the use of additional etching
or replication processes. A combination of the printed organic semiconductor
microstructure and an elastomeric top-gate dielectric resulted in
a highly sensitive organic field-effect transistor (FET) pressure
sensor with a high pressure sensitivity of 1.07 kPa–1 and a rapid response time of <20 ms with a high reliability over
1000 cycles. The flexibility and high performance of the 3D OSC FET
pressure sensor were exploited in the successful application of our
sensors to real-time monitoring of the radial artery pulse, which
is useful for healthcare monitoring, and to touch sensing in the e-skin
of a realistic prosthetic hand.