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High Pressure and High Temperature Annealing of Ni-Containing, Nitrogen-rich Synthetic Diamonds and the Formation of NE8 Centers
journal contribution
posted on 2020-04-09, 11:35 authored by Liangchao Chen, Weixia Shen, Chao Fang, Yuewen Zhang, Peiyang Mu, Guangtong Zhou, Qianqian Wang, Zhuangfei Zhang, Xiaopeng JiaEmerging quantum
technologies require the fabrication of diamonds
that contain single defects with specific optical, electronic, and
magnetic properties. We report on the results of an annealing study
performed at a pressure of 3.5 GPa with a temperature range of 1500–1900
°C on Ni-containing, nitrogen-rich (up to 640 ppm) synthetic
diamonds and the formation of NE8 (N2NiN2) centers.
This work examines the nitrogen-vacancy defects and nickel-related
defects in detail. The results shown that high nitrogen concentration
is more conducive to the formation of high-intensity NE8 centers compared
with diamonds having a low nitrogen content. The aggregation of the
A-center nitrogen facilitated the formation of the NE8 center. Furthermore,
the intensity of the negatively charged nitrogen-vacancy (NV–) center decreased at higher annealing temperatures in the range
of 1500–1800 °C. Our experimental results help increase
the understanding of the formation of various centers in diamonds
and their associated relationships to realize the effective control
of the NE8 center concentration.
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nitrogen-vacancy defectsNE 8 centerN 2 NiN 2quantum technologiesannealing studyHigh PressureNE 8 Centers640 ppmannealing temperaturesNE 8NVnitrogen contentformationNE 8 centersHigh Temperature Annealingnickel-related defectsnitrogen concentrationNE 8 center concentrationA-center nitrogentemperature range3.5 GPa
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