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High Efficiency CIGS Solar Cells by Bulk Defect Passivation through Ag Substituting Strategy
journal contribution
posted on 2020-03-05, 19:05 authored by Yunhai Zhao, Shengjie Yuan, Dongxing Kou, Zhengji Zhou, Xinshou Wang, Haiqin Xiao, Yueqing Deng, Changcheng Cui, Qianqian Chang, Sixin WuCu(In,Ga)Se2 (CIGS) is considered a promising photovoltaics material due
to its excellent properties and high efficiency. However, the complicated
deep defects (such as InCu or GaCu) in the CIGS
layer hamper the development of polycrystalline CIGS solar cells.
Numerous efforts have been employed to passivate these defects which
distributed in the grain boundary and the CIGS/CdS interface. In this
work, we implemented an effective Ag substituting approach to passivate
bulk defects in CIGS absorber. The composition and phase characterizations
revealed that Ag was successfully incorporated in the CIGS lattice.
The substituting of Ag could boost the crystallization without obviously
changing the band gap. The C–V and EIS results demonstrated
that the device showed enlarged Wd and beneficial carrier
transport dynamics after Ag incorporation. The DLTS result revealed
that the deep InCu defect density was dramatically decreased
after Ag substituting for Cu. A champion Ag-substituted CIGS device
exhibited a remarkable efficiency of 15.82%, with improved VOC of 630 mV, JSC of 34.44 mA/cm2, and FF of 72.90%. Comparing with the
efficiency of an unsubstituted CIGS device (12.18%), a Ag-substituted
CIGS device exhibited 30% enhancement.
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champion Ag-substituted CIGS deviceGa CuCIGS absorberAg incorporationHigh Efficiency CIGS Solar CellsJ SCband gapgrain boundaryDLTS resultAg-substituted CIGS device630 mVCIGS latticepassivate bulk defectscarrier transport dynamicsFFphotovoltaics materialCu defect densityCIGS layerBulk Defect PassivationNumerous effortsEIS resultsphase characterizationsV OC
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