Flexible Nanoporous WO_3–x Nonvolatile Memory Device

Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO_3–x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO_3–x RRAM device showed bipolar switching characteristics and a high I_ON/I_OFF ratio of ∼10⁵. The device also showed stable retention time over 5 × 10⁵ s, outstanding cell-to-cell uniformity, and bending endurance over 10³ cycles when measured in both the flat and the maximum bending conditions.