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Few-Layer MoS2/a-Si:H Heterojunction Pin-Photodiodes for Extended Infrared Detection
journal contribution
posted on 2019-05-13, 00:00 authored by Andreas Bablich, Daniel S. Schneider, Paul Kienitz, Satender Kataria, Stefan Wagner, Chanyoung Yim, Niall McEvoy, Olof Engstrom, Julian Müller, Yilmaz Sakalli, Benjamin Butz, Georg S. Duesberg, Peter Haring Bolívar, Max C. LemmeFew-layer molybdenum disulfide (FL-MoS2) films have
been integrated into amorphous silicon (a-Si:H) pin-photodetectors.
To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced
chemical vapor deposition (PE-CVD) on top of large-scale synthesized
and transferred homogeneous FL-MoS2. This novel detector
array exhibits long-term stability (more than six month) and outperforms
conventional silicon-based pin-photodetectors in the infrared range
(IR, λ = 2120 nm) in terms of sensitivities by up to ∼50
mAW–1. Photodetectivities of up to ∼2 ×
1010 Jones and external quantum efficiencies of ∼3%
are achieved. The detectors further feature the additional functionality
of bias-dependent responsivity switching between the different spectral
ranges. The realization of such scalable detector arrays is an essential
step toward pixelated and wavelength-selective sensors operating in
the IR spectral range.