am9b08189_si_001.pdf (1.93 MB)
Ferroelectric Second-Order Memristor
journal contribution
posted on 2019-08-23, 22:13 authored by Vitalii Mikheev, Anastasia Chouprik, Yury Lebedinskii, Sergei Zarubin, Yury Matveyev, Ekaterina Kondratyuk, Maxim G. Kozodaev, Andrey M. Markeev, Andrei Zenkevich, Dmitrii NegrovWhile
the conductance of a first-order memristor is defined entirely
by the external stimuli, in the second-order memristor it is governed
by the both the external stimuli and its instant internal state. As
a result, the dynamics of such devices allows to naturally emulate
the temporal behavior of biological synapses, which encodes the spike
timing information in synaptic weights. Here, we demonstrate a new
type of second-order memristor functionality in the ferroelectric
HfO2-based tunnel junction on silicon. The continuous change
of conductance in the p+-Si/Hf0.5Zr0.5O2/TiN tunnel junction is achieved via the gradual switching
of polarization in ferroelectric domains of polycrystalline Hf0.5Zr0.5O2 layer, whereas the combined
dynamics of the built-in electric field and charge trapping/detrapping
at the defect states at the bottom Si interface defines the temporal
behavior of the memristor device, similar to synapses in biological
systems. The implemented ferroelectric second-order memristor exhibits
various synaptic functionalities, such as paired-pulse potentiation/depression
and spike-rate-dependent plasticity, and can serve as a building block
for the development of neuromorphic computing architectures.
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Ferroelectric Second-Order Memristordynamicconductancesynapsesbottom Si interfacetunnel junctionmemristor exhibitsbuilding blockmemristor functionalitysynaptic functionalitiessynaptic weightsHfO 2Hf 0.5 Zr 0.5 O 2 layerspike-rate-dependent plasticityspike timing informationstimulimemristor devicedefect states
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