American Chemical Society
Browse
ph9b00616_si_001.pdf (673.17 kB)

Enhanced Spontaneous Emission Rates for Single Isoelectronic Luminescence Centers in Photonic Crystal Cavities

Download (673.17 kB)
journal contribution
posted on 2020-01-13, 19:33 authored by Ruoxi Wang, Michio Ikezawa, Yoshiki Sakuma, Hiroyuki Takeda, Naoki Ikeda, Yoshimasa Sugimoto, Kazuaki Sakoda, Yuuta Yamada, Yasuaki Masumoto
Purcell effect enhancement of spontaneous emission rates is demonstrated for isoelectronic trap single-photon emitters. Two-dimensional photonic crystal slabs with L3 defects were fabricated in nitrogen delta-doped GaAs. Photoluminescence spectra of each photonic crystal cavity had a series of sharp and bright lines arising from individual nitrogen luminescence centers, which was confirmed by Hanbury-Brown and Twiss measurements. The emission rates of these lines depended on cavity detuning, indicating a resonant character of the enhancement. The observed emission lifetime in the cavity was 400 ps, which would be the shortest lifetime reported so far for luminescence centers in GaAs.

History