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Electronic Structure and Enhanced Charge-Density Wave Order of Monolayer VSe2
journal contribution
posted on 2018-06-18, 00:00 authored by Jiagui Feng, Deepnarayan Biswas, Akhil Rajan, Matthew D. Watson, Federico Mazzola, Oliver J. Clark, Kaycee Underwood, Igor Marković, Martin McLaren, Andrew Hunter, David M. Burn, Liam B. Duffy, Sourabh Barua, Geetha Balakrishnan, François Bertran, Patrick Le Fèvre, Timur K. Kim, Gerrit van der Laan, Thorsten Hesjedal, Peter Wahl, Phil D. C. KingHow the interacting
electronic states and phases of layered transition-metal
dichalcogenides evolve when thinned to the single-layer limit is a
key open question in the study of two-dimensional materials. Here,
we use angle-resolved photoemission to investigate the electronic
structure of monolayer VSe2 grown on bilayer graphene/SiC.
While the global electronic structure is similar to that of bulk VSe2, we show that, for the monolayer, pronounced energy gaps
develop over the entire Fermi surface with decreasing temperature
below Tc = 140 ± 5 K, concomitant
with the emergence of charge-order superstructures evident in low-energy
electron diffraction. These observations point to a charge-density
wave instability in the monolayer that is strongly enhanced over that
of the bulk. Moreover, our measurements of both the electronic structure
and of X-ray magnetic circular dichroism reveal no signatures of a
ferromagnetic ordering, in contrast to the results of a recent experimental
study as well as expectations from density functional theory. Our
study thus points to a delicate balance that can be realized between
competing interacting states and phases in monolayer transition-metal
dichalcogenides.
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use angle-resolved photoemissionsingle-layer limitEnhanced Charge-Density Wave Orderlow-energy electron diffractionmonolayer transition-metal dichalcogenidescharge-order superstructurestransition-metal dichalcogenidesobservations pointenergy gapsT cMonolayer VSe 2Fermi surfacephaseElectronic Structuremonolayer VSe 2charge-density wave instabilitybulk VSe 2
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