Electronic Properties of Si–Hx Vibrational Modes at Si Waveguide Interface
2015-12-17T09:52:25Z (GMT) by
Attenuated total reflectance (ATR) and X-ray photoelectron spectroscopy in suite with Kelvin probe were conjugated to explore the electronic properties of Si–Hx vibrational modes by developing Si waveguide with large dynamic detection range compared with conventional IR. The Si 2p emission and work-function related to the formation and elimination of Si–Hx bonds at Si surfaces are monitored based on the detection of vibrational mode frequencies. A transition between various Si–Hx bonds and thus related vibrational modes is monitored for which effective momentum transfer could be demonstrated. The combination of the aforementioned methods provides for results that permit a model for the kinetics of hydrogen termination of Si surfaces with time and advanced surface characterizing of hybrid-terminated semiconducting solids.
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