am9b19362_si_001.pdf (1.22 MB)
Electroforming in Metal-Oxide Memristive Synapses
journal contribution
posted on 2020-02-25, 19:03 authored by Tao Wang, Yuanyuan Shi, Francesco Maria Puglisi, Shaochuan Chen, Kaichen Zhu, Ying Zuo, Xuehua Li, Xu Jing, Tingting Han, Biyu Guo, Kristýna Bukvišová, Lukáš Kachtík, Miroslav Kolíbal, Chao Wen, Mario LanzaMemristors have shown an extraordinary potential to emulate the
plastic and dynamic electrical behaviors of biological synapses and
have been already used to construct neuromorphic systems with in-memory
computing and unsupervised learning capabilities; moreover, the small
size and simple fabrication process of memristors make them ideal
candidates for ultradense configurations. So far, the properties of
memristive electronic synapses (i.e., potentiation/depression, relaxation,
linearity) have been extensively analyzed by several groups. However,
the dynamics of electroforming in memristive devices, which defines
the position, size, shape, and chemical composition of the conductive
nanofilaments across the device, has not been analyzed in depth. By
applying ramped voltage stress (RVS), constant voltage stress (CVS),
and pulsed voltage stress (PVS), we found that electroforming is highly
affected by the biasing methods applied. We also found that the technique
used to deposit the oxide, the chemical composition of the adjacent
metal electrodes, and the polarity of the electrical stimuli applied
have important effects on the dynamics of the electroforming process
and in subsequent post-electroforming bipolar resistive switching.
This work should be of interest to designers of memristive neuromorphic
systems and could open the door for the implementation of new bioinspired
functionalities into memristive neuromorphic systems.