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Electrical Contact Barriers between a Three-Dimensional Metal and Layered SnS2
journal contribution
posted on 2020-03-17, 18:12 authored by Chengzhai Lv, Wenjie Yan, Tung-Ho Shieh, Yue Zhao, Gang Wu, Yanfeng Zhao, Yanhui Lv, Duan Zhang, Yanhui Chen, Sunil K. Arora, Cormac Ó Coileáin, Ching-Ray Chang, Hung Hsiang Cheng, Kuan-Ming Hung, Han-Chun WuField-effect transistors derived from traditional 3D semiconductors
are rapidly approaching their fundamental limits. Layered semiconducting
materials have emerged as promising candidates to replace restrictive
3D semiconductor materials. However, contacts between metals and layered
materials deviate from Schottky–Mott behavior when determined
by transport methods, while X-ray photoelectron spectroscopy measurements
suggest that the contacts should be at the Schottky limit. Here, we
present a systematic investigation on the influence of metal selection
when electrically contacting SnS2, a layered metal dichalcogenide
semiconductor with the potential to replace silicon. It is found that
the electrically measured barrier height depends also weakly on the
work function of the metal contacts with slopes of 0.09 and −0.34
for n-type and p-type Schottky contacts, respectively. Based on the
Kirchhoff voltage law and considering a current path induced by metallic
defects, we found that the Schottky barrier still follows the Schottky–Mott
limits and the electrically measured barrier height mainly originates
from the van der Waals gap between the metal and SnS2,
and the slope depends on the magnitude of the van der Waals capacitance.
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Keywords
3 D semiconductorsvan der Waals gapSnS 2barrier heightvan der Waals capacitanceLayered semiconducting materialsX-ray photoelectron spectroscopy measurements3 D semiconductor materialsmetal dichalcogenide semiconductorp-type Schottky contactsElectrical Contact BarriersKirchhoff voltage lawLayered SnS 2 Field-effect transistors
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