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Efficient Liquid Nitrogen Exfoliation of MoS2 Ultrathin Nanosheets in the Pure 2H Phase
journal contribution
posted on 2019-12-11, 15:05 authored by Honglei Wang, Wenzhen Lv, Jun Shi, Hongguang Wang, Dexu Wang, Lu Jin, Jie Chao, Peter A. van Aken, Runfeng Chen, Wei HuangClean and efficient exfoliation of bulk MoS2 into single-
or few-layered nanosheets in the pure semiconducting hexagonal phase
(2H phase) remains a great challenge and becomes a bottleneck for
the intensive studies and applications of MoS2-based nanomaterials.
Here, a new method for the scalable synthesis of 2H-MoS2 nanosheets using liquid nitrogen (L-N2) exfoliation has
been developed. After five heating/L-N2 immersion cycles,
the produced MoS2 nanosheets are primarily fewer than three
layers in the pure 2H phase after the evaporation of the exfoliation
reagent of L-N2. Impressively, two-dimensional (2D) van
der Waals heterostructures by accommodating organic semiconductive
nanoaggregates on the surface of semiconducting 2H-MoS2 nanosheets exhibit excellent electronic rectification effects for
a nonvolatile write-once-read-many-times memory behavior with an ON/OFF
ratio of over 105. This work with the novel heating/L-N2 exfoliation strategy to prepare clean and pure 2H-MoS2 nanosheets would open up tremendous potential opportunities
for the fundamental studies and practical applications of semiconducting
2D nanomaterials.
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2 H phaseMoS 2 nanosheets2 H-MoS 2 nanosheetsapplicationL-N 2Efficient Liquid Nitrogen ExfoliationMoS 2 Ultrathin Nanosheetsvan der Waals heterostructuresexfoliationnonvolatile write-once-read-many-times memory behaviorPure 2 H Phase Cleansemiconducting 2 H-MoS 2 nanosheets exhibitsemiconducting 2 D nanomaterialsheatingbulk MoS 2
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