an0c01246_si_001.pdf (406.09 kB)
Effects of Illumination and Ferroelectric Field on Nanoscale Al:ZnO Films: Implications for Nonvolatile Multistage Storage and Photosensor Devices
journal contribution
posted on 2020-06-02, 11:35 authored by Shasha Liu, Chao Jin, Yuchen Wang, Ping Wang, Xin Pang, Dongxing Zheng, Rongkun Zheng, Haili BaiIn
this work, the nanoscale Al:ZnO (AZO) films with various densities
of oxygen vacancies were grown on 0.7PbMg1/3Nb2/3O3–0.3PbTiO3 single crystal substrates.
The Kelvin probe force microscopy and Hall effect were used to investigate
the surface potential and carrier density modulated by the ferroelectric
field and illumination effects. Tunable carrier densities and resistivity
were obtained in the AZO films by changing the density of the oxygen
vacancies. The carrier density can be largely modulated by the ferroelectric
field effect in the AZO films with lower carrier density. The surface
potential gradually increases under illumination, which can be attributed
to the relaxation of the photoconductivity. As a result, the various
semiconducting properties of the AZO films were achieved by the combination
of ferroelectric field and illumination effect. Our results have potential
applications for nonvolatile multistage storage and photosensor devices.