nn6b07577_si_001.pdf (1.92 MB)
Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory
journal contribution
posted on 2017-01-23, 16:51 authored by Kai Qian, Roland Yingjie Tay, Meng-Fang Lin, Jingwei Chen, Huakai Li, Jinjun Lin, Jiangxin Wang, Guofa Cai, Viet Cuong Nguyen, Edwin Hang Tong Teo, Tupei Chen, Pooi See LeeElectronics with multifunctionalities
such as transparency, portability,
and flexibility are anticipated for future circuitry development.
Flexible memory is one of the indispensable elements in a hybrid electronic
integrated circuit as the information storage device. Herein, we demonstrate
a transparent, flexible, and transferable hexagonal boron nitride
(hBN)-based resistive switching memory with indium tin oxide (ITO)
and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate.
The ITO/hBN/graphene/PDMS memory device not only exhibits excellent
performance in terms of optical transmittance (∼85% in the
visible wavelength), ON/OFF ratio (∼480), retention time (∼5
× 104 s) but also shows robust flexibility under bending
conditions and stable operation on arbitrary substrates. More importantly,
direct observation of indium filaments in an ITO/hBN/graphene device
is found via ex situ transmission electron microscopy,
which provides critical insight on the complex resistive switching
mechanisms.