nn9b06892_si_001.pdf (2.61 MB)
Direct Laser Patterning and Phase Transformation of 2D PdSe2 Films for On-Demand Device Fabrication
journal contribution
posted on 2019-12-13, 13:08 authored by Viktoryia Shautsova, Sapna Sinha, Linlin Hou, Qianyang Zhang, Martin Tweedie, Yang Lu, Yuewen Sheng, Benjamin F. Porter, Harish Bhaskaran, Jamie H. WarnerHeterophase homojunction formation in atomically thin
2D layers
is of great importance for next-generation nanoelectronics and optoelectronics
applications. Technologically challenging, controllable transformation
between the semiconducting and metallic phases of transition metal
chalcogenides is of particular importance. Here, we demonstrate that
controlled laser irradiation can be used to directly ablate PdSe2 thin films using high power or trigger the local transformation
of PdSe2 into a metallic phase PdSe2–x using lower laser power. Such transformations are
possible due to the low decomposition temperature of PdSe2 and a variety of stable phases compared to other 2D transition metal
dichalcogenides. Scanning transmission electron microscopy is used
to reveal the laser-induced Se-deficient phases of PdSe2 material. The process sensitivity to the laser power allows patterning
flexibility for resist-free device fabrication. The laser-patterned
devices demonstrate that a laser-induced metallic phase PdSe2–x is stable with increased conductivity by a factor
of about 20 compared to PdSe2. These findings contribute
to the development of nanoscale devices with homojunctions and scalable
methods to achieve structural transformations in 2D materials.
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On-Demand Device Fabrication Heterophase homojunction formationresist-free device fabricationtransformationDirect Laser Patterningablate PdSe 2laser-induced Se-deficient phasestransition metal chalcogenides2 D materialsScanning transmission electron microscopy2 D PdSe 2 Films2 D layersPdSe 2 materiallaser power2 D transition metal dichalcogenidesPdSe 2
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