posted on 2020-03-20, 00:13authored byAdam P. Hinckley, Madison M. Driskill, Anthony J. Muscat
Organosilane
monolayers are part of many process flows in nanoelectronics
and biotechnology because of their versatility. Monolayers that inhibit
reactions on silicon/silicon oxide surfaces are needed to create patterns
that direct the deposition of molecules and realize some of these
applications. Organosilane monolayers on silicon oxide are typically
deposited from the liquid phase by repeated deposition and cleaning
cycles. Cleaning consists of solvent extraction, which removes weakly
bound aggregates that physisorb in or on the layer during deposition.
Adding a short immersion in an aqueous oxidizing base such as Standard
Clean 1 (SC-1), which is a particle removal method in semiconductor
manufacturing, reduced the time from 48 to 2 h to deposit an inhibiting
monolayer. The SC-1 not only removed agglomerates but also re-hydroxylated
the siloxane bridges at the interface between the monolayer and the
silicon oxide surface based on X-ray photoelectron spectroscopy measurements
of the hydroxyl group concentration. A line and space pattern in the
organosilane monolayer made by conductive atomic force microscopy
(C-AFM) was used to direct the precursors titanium tetrachloride (TiCl4) and water vapor to deposit titanium dioxide (TiO2) by atomic layer deposition (ALD) with a selectivity greater than
0.999. The titanium dioxide lines were about 170 nm wide, 9 nm high,
and 20 μm long. The monolayer deposition procedure was done
in a conventional laboratory using the common deposition solvent toluene
and could be used to make versatile structures for nanodevice fabrication.