cg6b00203_si_001.pdf (1.61 MB)
Demonstration of Hexagonal Phase Silicon Carbide Nanowire Arrays with Vertical Alignment
journal contribution
posted on 2016-04-11, 00:00 authored by Lunet
E. Luna, Colin Ophus, Jonas Johansson, Roya Maboudian, Carlo CarraroSiC
nanowire based electronics hold promise for data collection
in harsh environments wherein conventional semiconductor platforms
would fail. However, the full adaptation of SiC nanowires as a material
platform necessitates strict control of nanowire crystal structure
and orientation for reliable performance. Toward such efforts, we
report the growth of hexagonal phase SiC nanowire arrays grown with
vertical alignment on commercially available single crystalline SiC
substrates. The nanowire hexagonality, confirmed with Raman spectroscopy
and atomic resolution microscopy, displays a polytypic distribution
of predominantly 2H and 4H. Employing a theoretical growth model,
the polytypic distribution of hexagonal phase nanowires is accurately
predicted in the regime of high supersaturation. Additionally, the
reduction of disorder-induced phonon density of states is achieved
while maintaining nanowire morphology through a postgrowth anneal.
The results of this work expand the repertoire of SiC nanowires by
implementing a low-temperature method that promotes polytypes outside
the well-studied cubic phase and introduces uniform, vertical alignment
on industry standard SiC substrates.