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Cu Nanoparticle Array-Mediated III–V/Si Integration: Application in Series-Connected Tandem Solar Cells
journal contribution
posted on 2020-03-23, 19:13 authored by Hidenori Mizuno, Kikuo Makita, Toshimitsu Mochizuki, Takeshi Tayagaki, Takeyoshi Sugaya, Hidetaka TakatoThe
integration of III–V materials with crystalline Si (c-Si)
is a promising pathway to design high-performance optoelectronic devices,
including solar cells. We have previously reported high-efficiency
III–V/Si tandem cells using our unique semiconductor bonding
technique, termed smart stack. In the conventional smart stack cells,
Pd nanoparticle (NP) arrays have been commonly employed as bonding
mediators between III–V and c-Si; however, from an economical
point of view, the use of other low-cost metals would be preferable.
Therefore, this study focused on the possibility of Cu. A polystyrene-block-poly-2-vinylpyridine (PS-b-P2VP)-based
block copolymer was utilized to prepare Cu NP arrays. Desired Cu NP
arrays were achieved by starting with self-assembled PS-b-P2VP micelles preloaded with Cu2+ ions. Satisfying bonding
properties (low-resistance interfaces) were confirmed when GaAs subcells
were stacked on the Cu NP arrays formed on native-oxide-removed c-Si
subcells. Conversion efficiencies of up to 25.9% have been demonstrated
with triple-junction structures consisting of InGaP/GaAs top and c-Si
bottom subcells. The long-term reliability of Cu NP array-mediated
smart stack cells was also verified by the thermal cycle and damp
heat tests. Hence, we have successfully confirmed that not only Pd
but also Cu is available to realize high-efficiency smart stack cells.